Integrated Device Technology 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S80BGGI

Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM - 71V67703S80BGGI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
71V67703S80BGGI
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S80BGGI
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67703S80BGGI
Product Name 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP512K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
 - 93L425DMQB40 - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - 0436A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details
Memory IC and Storage Component - 774-CY14B116N-Z30XI - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category NVRAM; NVSRAM; SRAM Chip
Access Time 30 ns
Operating Temperature -40 C (-40 F)
View Details
3 suppliers