Integrated Device Technology 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S75BQ

Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM - 71V67703S75BQ - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
71V67703S75BQ
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S75BQ
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67703S75BQ
Product Name 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71256SA12YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 256 kbits
View Details
Memory - 5962-9459901MXA-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type "28-CDIP (0.300"", 7.62mm)"
View Details
2 suppliers
 - 93L415FMQB - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type FL16
View Details
3 suppliers
Memory - AS5C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 to 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details