Integrated Device Technology 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S75BGG

Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM - 71V67703S75BGG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
71V67703S75BGG
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S75BGG
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67703S75BGG
Product Name 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - 93Z451FMQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category PROM; Non-Volatile
Cycle Time 55 ns
Density 8 kbits
View Details
2 suppliers
Flash Memory - 1882794P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - AS29LV016D - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71256L25Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details