Integrated Device Technology Integrated Circuits (ICs) - Memory - Memory 71V67603S166PF

Description
Win Source Part Number: 1377601-71V67603S166 PF Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: 0°C ~ 70°C (TA) Fake Threat In the Open Market: 36 pct. MSL Level: 3 (168 Hours) Mfr: IDT, Integrated Device Technology Inc Package: Bulk Product Status: Active Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Base Product Number: 71V67603 Technology: SRAM - Synchronous, SDR Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Affected ECCN: 3A991B2A Voltage - Supply: 3.135V ~ 3.465V Memory Type: Volatile Memory Format: SRAM Memory Size: 9Mbit Memory Organization: 256K x 36 Memory Interface: Parallel Clock Frequency: 166 MHz Access Time: 3.5 ns
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Description
Win Source Part Number: 1377601-71V67603S166 PF Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: 0°C ~ 70°C (TA) Fake Threat In the Open Market: 36 pct. MSL Level: 3 (168 Hours) Mfr: IDT, Integrated Device Technology Inc Package: Bulk Product Status: Active Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Base Product Number: 71V67603 Technology: SRAM - Synchronous, SDR Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Affected ECCN: 3A991B2A Voltage - Supply: 3.135V ~ 3.465V Memory Type: Volatile Memory Format: SRAM Memory Size: 9Mbit Memory Organization: 256K x 36 Memory Interface: Parallel Clock Frequency: 166 MHz Access Time: 3.5 ns
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Datasheet
Datasheet Summary
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The IDT71V67603S166PF is a high-speed synchronous SRAM memory device with a configuration of 256K x 36 bits. It operates at a core voltage of 3.3V and supports data access speeds of up to 166MHz with a clock access time of 3.5ns. The device features a burst mode capability, allowing it to provide four cycles of data for a single address input, which enhances performance for applications requiring rapid data access. This SRAM includes a self-timed write cycle with global write control and byte write enable options, facilitating flexible data handling. It is available in multiple package types, including a 100-pin thin plastic quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA), making it suitable for various design requirements. The device also features power-down control via the ZZ input, ensuring low power consumption during inactive periods. Engineers considering this product should note its commercial and industrial temperature ranges, making it versatile for different operating environments.

Datasheet Summary
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The IDT71V67603S166PF is a high-speed synchronous SRAM memory device with a configuration of 256K x 36 bits. It operates at a core voltage of 3.3V and supports data access speeds of up to 166MHz with a clock access time of 3.5ns. The device features a burst mode capability, allowing it to provide four cycles of data for a single address input, which enhances performance for applications requiring rapid data access. This SRAM includes a self-timed write cycle with global write control and byte write enable options, facilitating flexible data handling. It is available in multiple package types, including a 100-pin thin plastic quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA), making it suitable for various design requirements. The device also features power-down control via the ZZ input, ensuring low power consumption during inactive periods. Engineers considering this product should note its commercial and industrial temperature ranges, making it versatile for different operating environments.

Suppliers

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Product
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Integrated Circuits (ICs) - Memory - Memory - 1377601-71V67603S166PF - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1377601-71V67603S166PF
Integrated Circuits (ICs) - Memory - Memory 1377601-71V67603S166PF
Win Source Part Number: 1377601-71V67603S166 PF Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: 0°C ~ 70°C (TA) Fake Threat In the Open Market: 36 pct. MSL Level: 3 (168 Hours) Mfr: IDT, Integrated Device Technology Inc Package: Bulk Product Status: Active Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Base Product Number: 71V67603 Technology: SRAM - Synchronous, SDR Mounting Type: Surface Mount HTSUS: 8542.32.0041 REACH Status: REACH Affected ECCN: 3A991B2A Voltage - Supply: 3.135V ~ 3.465V Memory Type: Volatile Memory Format: SRAM Memory Size: 9Mbit Memory Organization: 256K x 36 Memory Interface: Parallel Clock Frequency: 166 MHz Access Time: 3.5 ns

Win Source Part Number: 1377601-71V67603S166PF
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: 0°C ~ 70°C (TA)
Fake Threat In the Open Market: 36 pct.
MSL Level: 3 (168 Hours)
Mfr: IDT, Integrated Device Technology Inc
Package: Bulk
Product Status: Active
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Product Number: 71V67603
Technology: SRAM - Synchronous, SDR
Mounting Type: Surface Mount
HTSUS: 8542.32.0041
REACH Status: REACH Affected
ECCN: 3A991B2A
Voltage - Supply: 3.135V ~ 3.465V
Memory Type: Volatile
Memory Format: SRAM
Memory Size: 9Mbit
Memory Organization: 256K x 36
Memory Interface: Parallel
Clock Frequency: 166 MHz
Access Time: 3.5 ns

Buy Now Datasheet
Memory - 71V67603S166PF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x14)

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Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 1377601-71V67603S166PF 71V67603S166PF
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 3.5 ns 3.5 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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