The 71V67603 3.3V CMOS SRAM is organized as 256K x 36. The 71V67603 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .The order of these three addresses are defined by the internal burst counter and the LBO input pin.
256K X 36 3.3V Synchronous SRAM 3.3V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
IC SRAM 9MBIT PARALLEL 119PBGA
| Integrated Device Technology | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67603S133BGGI | 71V67603S133BGGI | 71V67603S133BGGI | 71V67603S133BGGI |
| Product Name | 3.3V 256K x 36 Synchronous 3.3V I/O PipeLined SRAM | Memory | Integrated Circuits (ICs) - Memory | |
| Memory Category | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Data Rate | 133 MHz | 133 MHz | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 256 kbits | 9000 kbits | 9000 kbits | |
| Number of Words | 256 k |
