Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S85BQG

Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

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Description
Supplier Links
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65903S85BQG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65903S85BQG
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S85BQG
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V65903S85BQG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V65903S85BQG
Integrated Circuits (ICs) - Memory - Memory 71V65903S85BQG
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site
Memory - 71V65903S85BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V65903S85BQG 71V65903S85BQG 71V65903S85BQG
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 85 ns 8.5 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
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