Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S85BQG

Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Product
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3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65903S85BQG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65903S85BQG
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S85BQG
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71V65903S85BQG - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71V65903S85BQG
Memory IC and Storage Component 774-71V65903S85BQG
IC SRAM 9MBIT PARALLEL 165CABGA Product overview: 71V65903S85BQG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V65903S85BQG can be used for catalog matching and distributor lookup.

IC SRAM 9MBIT PARALLEL 165CABGA Product overview: 71V65903S85BQG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V65903S85BQG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V65903S85BQG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V65903S85BQG
Integrated Circuits (ICs) - Memory - Memory 71V65903S85BQG
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site
Memory - 71V65903S85BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)

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Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V65903S85BQG 774-71V65903S85BQG 71V65903S85BQG 71V65903S85BQG
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM Memory IC and Storage Component Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 85 ns 8.5 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
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