Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S80PFGI8

Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65903S80PFGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65903S80PFGI8
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S80PFGI8
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V65903S80PFGI8
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Cycle Time 80 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V25761S183PFI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5.5 ns
Density 4500 kbits
View Details
Memory - CY62126DV30L-55BVXE-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 1000 kbits
View Details
2 suppliers
Memory IC and Storage Component - 774-NMC2148HJ-2 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 45 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
4 suppliers
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details