Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S80PFG8

Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65903S80PFG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65903S80PFG8
3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65903S80PFG8
The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory - SRAM - 71V65903S80PFG8 - 134906-71V65903S80PFG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V65903S80PFG8
134906-71V65903S80PFG8
Memory - SRAM - 71V65903S80PFG8 134906-71V65903S80PFG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 134906-71V65903S80PF G8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: SRAM - Synchronous ZBT Memory Type: Volatile Memory Size: 9Mb (512K x 18) Access Time: 8ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 100-TQFP (14x14) Supply Voltage - Operating: 3.135 V to 3.465 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 134906-71V65903S80PFG8
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SRAM - Synchronous ZBT
Memory Type: Volatile
Memory Size: 9Mb (512K x 18)
Access Time: 8ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 100-TQFP (14x14)
Supply Voltage - Operating: 3.135 V to 3.465 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V65903S80PFG8 134906-71V65903S80PFG8
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM Memory - SRAM - 71V65903S80PFG8
Memory Category SRAM Chip Volatile; SRAM Chip
Cycle Time 80 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512 kbits
Number of Words 512 k
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