The 71V65903 3.3V CMOS SRAM is organized as 512K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65903 contain address, data-in and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
IC SRAM 9MBIT PARALLEL 100TQFP Product overview: 71V65903S80PFG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V65903S80PFG can be used for catalog matching and distributor lookup.
Win Source Part Number: 1030950-71V65903S80P
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, SDR (ZBT)
Memory Type: Volatile
Memory Size: 9Mb (512K x 18)
Access Time: 8 ns
Voltage - Supply: 3.135V ~ 3.465V
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Memory Interface: Parallel
Alternative Parts (Cross-Reference): 71V65703S80PFG; 71V67903S80PFG; 71V65703S80PFG8; IS61LF51218A-7.5TQLI
ECCN: 3A991B2A
Fake Threat In the Open Market: 62 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Other Names: 2156-71V65903S80PFG,
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8 ns 100-TQFP (14x14)
IC SRAM 9MBIT PARALLEL 100TQFP
| Integrated Device Technology | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V65903S80PFG | 774-71V65903S80PFG | 1030950-71V65903S80PFG | 71V65903S80PFG | 71V65903S80PFG | 71V65903S80PFG |
| Product Name | 3.3V 512K x 18 ZBT Synchronous 3.3V I/O Flowthrough SRAM | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM - Synchronous, SDR (ZBT); SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Cycle Time | 80 ns | |||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 512 kbits | 9000 kbits | 9000 kbits | 9000 kbits | ||
| Number of Words | 512 k |
