Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65803S150PFGI

Description
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM - 71V65803S150PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM
71V65803S150PFGI
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65803S150PFGI
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory IC and Storage Component - 774-71V65803S150PFGI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-71V65803S150PFGI
Memory IC and Storage Component 774-71V65803S150PFGI
IC SRAM 9MBIT PARALLEL 100TQFP Product overview: 71V65803S150PFGI from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V65803S150PFGI can be used for catalog matching and distributor lookup.

IC SRAM 9MBIT PARALLEL 100TQFP Product overview: 71V65803S150PFGI from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V65803S150PFGI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 71V65803S150PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V65803S150PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V65803S150PFGI
Integrated Circuits (ICs) - Memory - Memory 71V65803S150PFGI
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Integrated Device Technology ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V65803S150PFGI 774-71V65803S150PFGI 71V65803S150PFGI 71V65803S150PFGI
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 150 MHz 150 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
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