Integrated Device Technology 3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65803S150BQG

Description
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM - 71V65803S150BQG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM
71V65803S150BQG
3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65803S150BQG
The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65803 3.3V CMOS SRAM organized as 512K X 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65803 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory - 71V65803S150BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V65803S150BQG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V65803S150BQG
Integrated Circuits (ICs) - Memory 71V65803S150BQG
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V65803S150BQG 71V65803S150BQG 71V65803S150BQG
Product Name 3.3V 512K x 18 ZBT Synchronous 3.3V I/O PipeLined SRAM Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 150 MHz 150 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512 kbits 9000 kbits 9000 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory IC and Storage Component - 736-DP8521AV-25 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers
Memory - 71T75802S100PFGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 18000 kbits
View Details
Memory - CY14E101Q2A-SXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
4 suppliers