Integrated Device Technology 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65703S80BQ

Description
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

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3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65703S80BQ - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65703S80BQ
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65703S80BQ
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

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Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V65703S80BQ
Product Name 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Cycle Time 80 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 256 k
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