Integrated Device Technology 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65703S80BQ

Description
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM - 71V65703S80BQ - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
71V65703S80BQ
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 71V65703S80BQ
The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V65703S80BQ
Product Name 3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Cycle Time 80 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882527 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - AS4SD2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16000 kbits
View Details
Logic - FIFOs Memory - 57401AW/883B - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 180 mA
View Details
Memory IC and Storage Component - 736-DP8409AD - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers