Integrated Device Technology 3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65603S150BQG

Description
The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

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Product
Description
Supplier Links
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM - 71V65603S150BQG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM
71V65603S150BQG
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65603S150BQG
The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V65603S150BQG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V65603S150BQG
Integrated Circuits (ICs) - Memory 71V65603S150BQG
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site
Memory - 71V65603S150BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V65603S150BQG 71V65603S150BQG 71V65603S150BQG
Product Name 3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 150 MHz 150 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256 kbits 9000 kbits 9000 kbits
Number of Words 256 k
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