The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output
IC SRAM 9MBIT PARALLEL 119PBGA
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
| Integrated Device Technology | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V65603S133BGGI | 71V65603S133BGGI | 71V65603S133BGGI | 71V65603S133BGGI |
| Product Name | 3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Data Rate | 133 MHz | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 256 kbits | 9000 kbits | 9000 kbits | |
| Number of Words | 256 k |
