Integrated Device Technology 3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65603S100BQG

Description
The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Suppliers

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Supplier Links
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM - 71V65603S100BQG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM
71V65603S100BQG
3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM 71V65603S100BQG
The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V65603 3.3V CMOS SRAM is organized as 256K X 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V65603 contain data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
 - 71V65603S100BQG - Rochester Electronics
Newburyport, MA, United States
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output

256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology Rochester Electronics
Product Category Memory Chips Memory Chips
Product Number 71V65603S100BQG 71V65603S100BQG
Product Name 3.3V 256K X 36 ZBT Synchronous 3.3V I/O PipeLined SRAM
Memory Category SRAM Chip SRAM Chip
Data Rate 100 MHz
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 256 k
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