Integrated Device Technology Memory 71V65602S133BQ

Description
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output
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Description
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output
Request a Quote Datasheet

Suppliers

Company
Product
Description
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 - 71V65602S133BQ - Rochester Electronics
Newburyport, MA, United States
256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output

256K X 36 3.3V Synchronous ZBT SRAM 2.5V I/O, Burst Counter Pipelined Output

Supplier's Site Datasheet
Memory - 71V65602S133BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

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Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V65602S133BQ 71V65602S133BQ
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; BGA165 BGA; 119-BGA
Access Time 4.2 ns
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