Integrated Device Technology 3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM 71V547S80PFGI

Description
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM - 71V547S80PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM
71V547S80PFGI
3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM 71V547S80PFGI
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V547S80PFGI
Product Name 3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM
Memory Category SRAM Chip
Cycle Time 80 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120202VXA - 5962F1120202VXA - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 4 k
View Details
Memory - AS4SD2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16000 kbits
View Details