Integrated Device Technology 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S15YG8

Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet
Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet

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3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V424S15YG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V424S15YG8
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S15YG8
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

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Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V424S15YG8
Product Name 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
Memory Category SRAM Chip
Access Time 15 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4096 kbits
Number of Words 512 k
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