Integrated Device Technology 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S15PHGI

Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V424S15PHGI - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V424S15PHGI
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S15PHGI
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
 - 71V424S15PHGI - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 512KX8, 15ns, CMOS, PDSO44

Standard SRAM, 512KX8, 15ns, CMOS, PDSO44

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V424S15PHGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V424S15PHGI
Integrated Circuits (ICs) - Memory - Memory 71V424S15PHGI
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
Memory - 71V424S15PHGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-TSOP II

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V424S15PHGI 71V424S15PHGI 71V424S15PHGI 71V424S15PHGI
Product Name 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 15 ns 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 512 k
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