Integrated Device Technology 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S15PHG

Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote Datasheet
Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V424S15PHG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V424S15PHG
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S15PHG
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
 - 71V424S15PHG - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 512KX8, 15ns, CMOS, PDSO44

Standard SRAM, 512KX8, 15ns, CMOS, PDSO44

Supplier's Site Datasheet
Memory - 71V424S15PHG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V424S15PHG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V424S15PHG
Integrated Circuits (ICs) - Memory - Memory 71V424S15PHG
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V424S15PHG 71V424S15PHG 71V424S15PHG 71V424S15PHG
Product Name 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 15 ns 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 2102-1N - Lingto Electronic Limited
Rochester Electronics
View Details
3 suppliers
Memory - CY14MB256J1-SXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers
SMV512K32-SP 16MB Radiation-Hardened SRAM - SMV512K32HFG/EM - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details