Integrated Device Technology 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424L12YG

Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet
Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet

Suppliers

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Product
Description
Supplier Links
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V424L12YG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V424L12YG
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424L12YG
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V424L12YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V424L12YG
Integrated Circuits (ICs) - Memory 71V424L12YG
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site
Memory - 71V424L12YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 36-SOJ

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V424L12YG 71V424L12YG 71V424L12YG
Product Name 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 512 k
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