Integrated Device Technology Memory 71V416VS10PH

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V416VS10PH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 71V416VS10PH
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-9232404MYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details
Controllers - BQ2204ASN-NTRG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory IC and Storage Component - 774-CY14B104L-BA25XC - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category NVSRAM; Non-Volatile; SRAM Chip
Access Time 25 ns
Cycle Time 25 ns
View Details
2 suppliers