Integrated Device Technology Memory 71V416VL10BEGI

Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
  • 71V416VL10BEGI - Rochester Electronics
    Rochester Electronics
  • Memory - 71V416VL10BEGI - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- 71V416VL10BEGI - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
71V416VL10BEGI
71V416VL10BEGI
4 Meg (256K X 16-Bit) 3.3V Static RAM

4 Meg (256K X 16-Bit) 3.3V Static RAM

Supplier's Site Datasheet
Memory - 71V416VL10BEGI - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
71V416VL10BEGI
Memory 71V416VL10BEGI
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V416VL10BEGI 71V416VL10BEGI
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Density 0 kbits 4000 kbits
Package Type BGA; BGA48 BGA; 48-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712192 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1712192
Specs
Memory Category Flash
Package Type SOIC
Pins 8
View Details
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DW - Texas Instruments
Texas Instruments
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories
SN74ACT2227DW
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - AS8S128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8S128K32
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 32229L7370 - Lingto Electronic Limited
Rochester Electronics
Memory
32229L7370
View Details