Integrated Device Technology Memory 71V416VL10BEGI

Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet
Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V416VL10BEGI - Rochester Electronics
Newburyport, MA, United States
4 Meg (256K X 16-Bit) 3.3V Static RAM

4 Meg (256K X 16-Bit) 3.3V Static RAM

Supplier's Site Datasheet
Memory - 71V416VL10BEGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V416VL10BEGI 71V416VL10BEGI
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Density 0 kbits 4000 kbits
Package Type BGA; BGA48 BGA; 48-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71T75602S100PF - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 18000 kbits
View Details
Memory IC and Storage Component - 736-BQ2203APN - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type Tube
View Details
2 suppliers
Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Specs
Operating Temperature 0 to 115 C (32 to 239 F)
Package Type QFP; Tray
Supply Voltage 3.135V ~ 3.465V
View Details