Integrated Device Technology 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S12YG8

Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V416S12YG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V416S12YG8
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S12YG8
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V416S12YG8 - 764707-71V416S12YG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V416S12YG8
764707-71V416S12YG8
Memory - SRAM - 71V416S12YG8 764707-71V416S12YG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 764707-71V416S12YG8 Packaging: Reel package Operating Temperature Range: 0°C ~ 70°C (TA) Package: 44-BSOJ (0.400", 10.16mm Width) Mounting: SMD Technology: SRAM - Asynchronous Operating Supply Voltage: 3 V ~ 3.6 V Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 12ns Family Name: 71V416S Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Manufacturer Package: 44-SOJ Alternative Parts (Cross-Reference): uPD444016LLE-A12-A; uPD444016LLE-A12; HM62W16255HJP-12; Introduction Date: August 05, 1999 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 764707-71V416S12YG8
Packaging: Reel package
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 44-BSOJ (0.400", 10.16mm Width)
Mounting: SMD
Technology: SRAM - Asynchronous
Operating Supply Voltage: 3 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 12ns
Family Name: 71V416S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 44-SOJ
Alternative Parts (Cross-Reference): uPD444016LLE-A12-A; uPD444016LLE-A12; HM62W16255HJP-12;
Introduction Date: August 05, 1999
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V416S12YG8 764707-71V416S12YG8
Product Name 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory - SRAM - 71V416S12YG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits
Number of Words 256 k
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