Integrated Device Technology 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S12YG

Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet
Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V416S12YG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V416S12YG
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S12YG
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V416S12YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V416S12YG
Integrated Circuits (ICs) - Memory 71V416S12YG
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site
Memory - 71V416S12YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V416S12YG 71V416S12YG 71V416S12YG
Product Name 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 12 ns 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 256 k
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