The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
4 Meg (256K X 16-Bit) 3.3V Static RAM
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)
IC SRAM 4MBIT PARALLEL 48CABGA
| Integrated Device Technology | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V416S12BEG | 71V416S12BEG | 71V416S12BEG | 71V416S12BEG |
| Product Name | 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout | Memory | Integrated Circuits (ICs) - Memory | |
| Memory Category | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 12 ns | 12 ns | 12 ns | |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 4096 kbits | 0 kbits | 4000 kbits | 4000 kbits |
| Number of Words | 256 k |
