Integrated Device Technology 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416L12YG8

Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote Datasheet
Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V416L12YG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V416L12YG8
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416L12YG8
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
 - 71V416L12YG8 - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

Standard SRAM, 256KX16, 12ns, CMOS, PDSO44

Supplier's Site Datasheet
Memory - 71V416L12YG8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V416L12YG8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416L12YG8
Integrated Circuits (ICs) - Memory - Memory 71V416L12YG8
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V416L12YG8 71V416L12YG8 71V416L12YG8 71V416L12YG8
Product Name 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Dual Memory IC and Storage Component - 774-MT5C1008DCJ-45/IT - ERSAELECTRONICS PTE. LTD.
Specs
Operating Temperature -40 C (-40 F)
Density 1000 kbits
Address Bus Width 17 bits
View Details
2 suppliers
Memory - CY14V104NA-BA25XI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4000 kbits
View Details
4 suppliers
Flash Memory - 1882878 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 71V016SA12BFGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details