Integrated Device Technology Integrated Circuits (ICs) - Memory 71V416L10BEI

Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet
Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V416L10BEI - Rochester Electronics
Newburyport, MA, United States
4 Meg (256K X 16-Bit) 3.3V Static RAM

4 Meg (256K X 16-Bit) 3.3V Static RAM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V416L10BEI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V416L10BEI
Integrated Circuits (ICs) - Memory 71V416L10BEI
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site
Memory - 71V416L10BEI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V416L10BEI 71V416L10BEI 71V416L10BEI
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Density 0 kbits 4000 kbits 4000 kbits
Package Type BGA; CABGA48 BGA BGA; 48-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024 kbits
View Details
Memory - 71016S20PHGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details