Integrated Device Technology Memory 71V416L10BEI

Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet
Description
4 Meg (256K X 16-Bit) 3.3V Static RAM
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V416L10BEI - Rochester Electronics
Newburyport, MA, United States
4 Meg (256K X 16-Bit) 3.3V Static RAM

4 Meg (256K X 16-Bit) 3.3V Static RAM

Supplier's Site Datasheet
Memory - 71V416L10BEI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V416L10BEI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V416L10BEI
Integrated Circuits (ICs) - Memory 71V416L10BEI
IC SRAM 4MBIT PARALLEL 48CABGA

IC SRAM 4MBIT PARALLEL 48CABGA

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V416L10BEI 71V416L10BEI 71V416L10BEI
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Density 0 kbits 4000 kbits 4000 kbits
Package Type BGA; CABGA48 BGA; 48-TFBGA BGA
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