Integrated Device Technology Integrated Circuits (ICs) - Memory - Memory 71V3579YS85PF

Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
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Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V3579YS85PF - Rochester Electronics
Newburyport, MA, United States
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3579YS85PF - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71V3579YS85PF
Integrated Circuits (ICs) - Memory - Memory 71V3579YS85PF
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V3579YS85PF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)

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Technical Specifications

  Rochester Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3579YS85PF 71V3579YS85PF 71V3579YS85PF
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Cycle Time 8.5 ns
Density 4500 kbits 4500 kbits
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