Integrated Device Technology Memory 71V3579S85PFI

Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
Request a Quote Datasheet
Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V3579S85PFI - Rochester Electronics
Newburyport, MA, United States
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Memory - 71V3579S85PFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3579S85PFI - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71V3579S85PFI
Integrated Circuits (ICs) - Memory - Memory 71V3579S85PFI
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3579S85PFI 71V3579S85PFI 71V3579S85PFI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Access Time 8.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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