Integrated Device Technology 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O 71V3579S80PFGI8

Description
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
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3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O - 71V3579S80PFGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
71V3579S80PFGI8
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O 71V3579S80PFGI8
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

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Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V3579S80PFGI8
Product Name 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4608 kbits
Number of Words 256 k
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