Integrated Device Technology 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O 71V3579S75PFGI

Description
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O - 71V3579S75PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
71V3579S75PFGI
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O 71V3579S75PFGI
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V3579S75PFGI
Product Name 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 4608 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71256L25YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details
Flash Memory - 1882723P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 16000 kbits
Package Type USON
View Details
Memory - CY14ME064Q2A-SXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)"
View Details
2 suppliers
 - 93L415FMQB - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type FL16
View Details
3 suppliers