Integrated Device Technology 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O 71V3579S75PFG

Description
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
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Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O - 71V3579S75PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O
71V3579S75PFG
3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O 71V3579S75PFG
The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V3579 3.3V CMOS SRAM is organized as 256K x 18. The 71V3579 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
 - 71V3579S75PFG - Rochester Electronics
Newburyport, MA, United States
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1039968-71V3579S75PFG - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1039968-71V3579S75PFG
Integrated Circuits (ICs) - Memory 1039968-71V3579S75PFG
Win Source Part Number: 1039968-71V3579S75PF G Category: Integrated Circuits (ICs)>Memory Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM - Synchronous, SDR Memory Type: Volatile Memory Size: 4.5Mb (256K x 18) Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.465V Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Temperature Range - Operating: 0°C ~ 70°C (TA) Memory Format: SRAM Clock Frequency: 117 MHz Memory Interface: Parallel Alternative Parts (Cross-Reference): 71V3577S75PFG; 71V3559S75PFG; 71V3577S75PFG8; IS61LF25618A-7.5TQLI ; IS61LF25618A-7.5TQLI -TR; IS61NLF25618A-7.5TQL I-TR; ECCN: 3A991B2A Fake Threat In the Open Market: 76 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Other Names: 2156-71V3579S75PFG,I DTIDT71V3579S75PFG

Win Source Part Number: 1039968-71V3579S75PFG
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, SDR
Memory Type: Volatile
Memory Size: 4.5Mb (256K x 18)
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Clock Frequency: 117 MHz
Memory Interface: Parallel
Alternative Parts (Cross-Reference): 71V3577S75PFG; 71V3559S75PFG; 71V3577S75PFG8; IS61LF25618A-7.5TQLI; IS61LF25618A-7.5TQLI-TR; IS61NLF25618A-7.5TQLI-TR;
ECCN: 3A991B2A
Fake Threat In the Open Market: 76 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Other Names: 2156-71V3579S75PFG,IDTIDT71V3579S75PFG

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V3579S75PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V3579S75PFG
Integrated Circuits (ICs) - Memory 71V3579S75PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V3579S75PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 100-TQFP (14x14)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3579S75PFG 71V3579S75PFG 1039968-71V3579S75PFG 71V3579S75PFG 71V3579S75PFG
Product Name 3.3V 256K x 18 Synchronous Flow-Through SRAM w/3.3V I/O Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 256 k
Address Bus Width 18 bits
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