Integrated Device Technology Memory 71V3578S150PF

Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
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Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect
Request a Quote
Datasheet
Datasheet Summary
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The IDT71V3578S150PF is a high-speed synchronous SRAM memory device with a configuration of 256K x 18 bits. It operates at a core voltage of 3.3V and supports a maximum clock frequency of 150MHz, providing a clock access time of 3.8ns. The device features pipelined outputs and a burst mode capability, allowing for efficient data transfer by providing four cycles of data for a single address input. The memory includes a global write control, byte write enable, and individual byte write selects, facilitating flexible data handling. It also supports power-down functionality controlled by the ZZ input, ensuring low power consumption during inactive periods. The IDT71V3578S150PF is available in multiple package options, including a 100-pin thin quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA). This product is suitable for applications requiring high-speed data access and efficient memory management.

Datasheet Summary
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The IDT71V3578S150PF is a high-speed synchronous SRAM memory device with a configuration of 256K x 18 bits. It operates at a core voltage of 3.3V and supports a maximum clock frequency of 150MHz, providing a clock access time of 3.8ns. The device features pipelined outputs and a burst mode capability, allowing for efficient data transfer by providing four cycles of data for a single address input. The memory includes a global write control, byte write enable, and individual byte write selects, facilitating flexible data handling. It also supports power-down functionality controlled by the ZZ input, ensuring low power consumption during inactive periods. The IDT71V3578S150PF is available in multiple package options, including a 100-pin thin quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA). This product is suitable for applications requiring high-speed data access and efficient memory management.

Suppliers

Company
Product
Description
Supplier Links
 - 71V3578S150PF - Rochester Electronics
Newburyport, MA, United States
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

256K X 18 3.3V Synchronous SRAM 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Memory - 71V3578S150PF - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

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Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V3578S150PF 71V3578S150PF
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP
Access Time 3.8 ns
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