Integrated Device Technology Memory 71V3577YS75PFG

Description
128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect
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Description
128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect
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Datasheet
Datasheet Summary
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The IDT71V3577YS75PFG is a 3.3V synchronous SRAM organized as 128K x 36 bits, designed for high-speed applications. It supports fast access times with options for 7.5ns at up to 117MHz clock frequency, making it suitable for commercial use. The memory features a flow-through architecture, allowing for efficient data handling without internal registers in the data output path. This SRAM includes a burst mode capability, enabling the generation of four cycles of data for a single address, which enhances performance in data-intensive applications. The device is equipped with a global write control, byte write enables, and a power-down feature controlled by the ZZ input, ensuring low power consumption during inactive periods. The IDT71V3577YS75PFG is available in multiple package options, including a 100-pin thin quad flatpack (TQFP) and ball grid array (BGA) configurations, making it versatile for various design requirements. It is compliant with the IEEE 1149.1 JTAG standard for boundary scan testing, which can be beneficial for debugging and system integration.

Datasheet Summary
Powered by GS/AI

The IDT71V3577YS75PFG is a 3.3V synchronous SRAM organized as 128K x 36 bits, designed for high-speed applications. It supports fast access times with options for 7.5ns at up to 117MHz clock frequency, making it suitable for commercial use. The memory features a flow-through architecture, allowing for efficient data handling without internal registers in the data output path. This SRAM includes a burst mode capability, enabling the generation of four cycles of data for a single address, which enhances performance in data-intensive applications. The device is equipped with a global write control, byte write enables, and a power-down feature controlled by the ZZ input, ensuring low power consumption during inactive periods. The IDT71V3577YS75PFG is available in multiple package options, including a 100-pin thin quad flatpack (TQFP) and ball grid array (BGA) configurations, making it versatile for various design requirements. It is compliant with the IEEE 1149.1 JTAG standard for boundary scan testing, which can be beneficial for debugging and system integration.

Suppliers

Company
Product
Description
Supplier Links
 - 71V3577YS75PFG - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect

128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Memory - 71V3577YS75PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 7.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 7.5 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3577YS75PFG - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
71V3577YS75PFG
Integrated Circuits (ICs) - Memory - Memory 71V3577YS75PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3577YS75PFG 71V3577YS75PFG 71V3577YS75PFG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Package Type QFP; TQFP; TQFP100 QFP; 100-LQFP QFP; TQFP; 100-TQFP (14x14)
Access Time 7.5 ns
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2 suppliers