The IDT71V3577S80PFG is a high-speed synchronous SRAM organized as 128K x 36 bits, designed for applications requiring fast data access. It supports access times of 6.5 ns at a clock frequency of up to 133 MHz in the TQFP package, with slower options available for commercial and industrial temperature ranges. The memory features a flow-through architecture with no registers in the data output path, allowing for efficient data handling. This SRAM includes a burst mode capability, enabling the device to provide four cycles of data for a single address, enhancing performance for burst data applications. It also features a self-timed write cycle with global write control and individual byte write enables, allowing for flexible data management. The device operates on a 3.3V core power supply and has a 3.3V I/O interface, making it suitable for modern low-voltage applications. The IDT71V3577S80PFG is available in multiple package options, including a 100-pin TQFP, a 119-ball BGA, and a 165 fine pitch BGA, accommodating various design requirements. Additionally, it offers an optional JTAG interface for boundary scan testing, which can be beneficial for debugging and system integration.
The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 100 MHz 8 ns 100-TQFP (14x14)
IC SRAM 4.5MBIT PARALLEL 100TQFP
| Integrated Device Technology | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V3577S80PFG | 71V3577S80PFG | 71V3577S80PFG |
| Product Name | 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
| Density | 4608 kbits | 4500 kbits | 4500 kbits |
| Number of Words | 128 k | ||
| Address Bus Width | 36 bits |
