Integrated Device Technology 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 71V3577S75BQ

Description
The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
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Suppliers

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Description
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3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O - 71V3577S75BQ - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O
71V3577S75BQ
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 71V3577S75BQ
The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
 - 71V3577S75BQ - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect

128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Memory - 71V3577S75BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V3577S75BQ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V3577S75BQ
Integrated Circuits (ICs) - Memory 71V3577S75BQ
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3577S75BQ 71V3577S75BQ 71V3577S75BQ 71V3577S75BQ
Product Name 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
Address Bus Width 36 bits
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