The 71V3577 3.3V CMOS SRAM is organized as 128K x 36. The 71V3577 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
128K X 36 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Output Burst Counter, Single Cycle Deselect
IC SRAM 4.5MBIT PARALLEL 119PBGA
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 117 MHz 7.5 ns 119-PBGA (14x22)
| Integrated Device Technology | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V3577S75BG | 71V3577S75BG | 71V3577S75BG | 71V3577S75BG |
| Product Name | 3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O | Integrated Circuits (ICs) - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 4608 kbits | 4500 kbits | 4500 kbits | |
| Number of Words | 128 k | |||
| Address Bus Width | 36 bits |
