Integrated Device Technology 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O 71V35761SA183BQG8

Description
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O - 71V35761SA183BQG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
71V35761SA183BQG8
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O 71V35761SA183BQG8
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V35761SA183BQG8
Product Name 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
Memory Category SRAM Chip
Data Rate 183 MHz
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4608 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882567 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Integrated Circuits (ICs) - Memory - Memory - 54F189DLQB - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Cycle Time 37.5 ns
Density 0 kbits
View Details
2 suppliers
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 448-CY14V101LA-BA45XITTR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000 kbits
View Details
6 suppliers