Integrated Device Technology 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O 71V35761S200PFG

Description
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O - 71V35761S200PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
71V35761S200PFG
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O 71V35761S200PFG
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V35761S200PFG
Product Name 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
Memory Category SRAM Chip
Data Rate 200 MHz
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4608 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - EEPROM - 24LC04T-I/SL100 - 854740-24LC04T-I/SL100 - Win Source Electronics
Specs
Memory Category EEPROM
View Details
2 suppliers
SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
Memory - AS5SP512K18 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821601VXC - 5962R1821601VXC - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2000 kbits
Package Type CG-SSOP-16
View Details