Integrated Device Technology Memory 71V35761S200BQ

Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)
Datasheet

Suppliers

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Product
Description
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Memory - 71V35761S200BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 71V35761S200BQ
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 3.1 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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