Integrated Device Technology Memory 71V35761S200BQ

Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V35761S200BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 71V35761S200BQ
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 3.1 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS01GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-9232406MYA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category NVSRAM; NVSRAM; SRAM Chip
Access Time 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Flash Memory - 1882519 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details