Integrated Device Technology Integrated Circuits (ICs) - Memory 71V35761S200BGGI

Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet
Description
IC SRAM 4.5MBIT PARALLEL 119PBGA
Datasheet

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Description
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Integrated Circuits (ICs) - Memory - 71V35761S200BGGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V35761S200BGGI
Integrated Circuits (ICs) - Memory 71V35761S200BGGI
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71V35761S200BGGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V35761S200BGGI 71V35761S200BGGI
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 200 MHz
Access Time 3.1 ns 3.1 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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