Integrated Device Technology Memory 71V35761S200BGGI

Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
Datasheet

Suppliers

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Description
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Memory - 71V35761S200BGGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V35761S200BGGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V35761S200BGGI
Integrated Circuits (ICs) - Memory 71V35761S200BGGI
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

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Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 71V35761S200BGGI 71V35761S200BGGI
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.1 ns 3.1 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4500 kbits 4500 kbits
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