Integrated Device Technology Memory 71V35761S200BG

Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
Datasheet
Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
Datasheet

Suppliers

Company
Product
Description
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Memory - 71V35761S200BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V35761S200BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V35761S200BG
Integrated Circuits (ICs) - Memory - Memory 71V35761S200BG
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 71V35761S200BG 71V35761S200BG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 3.1 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 4500 kbits 4500 kbits
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