Integrated Device Technology Integrated Circuits (ICs) - Memory - Memory 71V35761S200BG

Description
IC SRAM 4.5MBIT PAR 119PBGA
Datasheet
Description
IC SRAM 4.5MBIT PAR 119PBGA
Datasheet

Suppliers

Company
Product
Description
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Integrated Circuits (ICs) - Memory - Memory - 71V35761S200BG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V35761S200BG
Integrated Circuits (ICs) - Memory - Memory 71V35761S200BG
IC SRAM 4.5MBIT PAR 119PBGA

IC SRAM 4.5MBIT PAR 119PBGA

Supplier's Site
Memory - 71V35761S200BG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V35761S200BG 71V35761S200BG
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 200 MHz
Density 4500 kbits 4500 kbits
Supply Voltage Surface Mount 3.135V ~ 3.465V
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