The IDT71V3559S85PFG is a 3.3V synchronous SRAM with a memory configuration of 256K x 18 bits, designed for high-speed applications. It supports a maximum operating frequency of 100 MHz, providing a clock-to-data access time of 7.5 ns. This SRAM features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The device includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable between linear and interleaved modes via the LBO pin. It has three chip enable pins (CE1, CE2, CE2) for easy depth expansion and a single read/write control pin. The outputs are flow-through, meaning there is no output data register, which simplifies the design. The IDT71V3559S85PFG is available in multiple package options, including a 100-pin thin quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA). It is suitable for both commercial and industrial temperature ranges, making it versatile for various applications.
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
128K X 36, 256K X 18, 3.3V Synchronous ZBT SRAM
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)
IC SRAM 4.5MBIT PARALLEL 100TQFP
| Integrated Device Technology | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V3559S85PFG | 71V3559S85PFG | 71V3559S85PFG | 71V3559S85PFG |
| Product Name | 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O | Memory | Integrated Circuits (ICs) - Memory | |
| Memory Category | SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Cycle Time | 85 ns | |||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 256 kbits | 4500 kbits | 4500 kbits | |
| Number of Words | 256 k |
