Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S85BQG8

Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O - 71V3559S85BQG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
71V3559S85BQG8
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S85BQG8
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V3559S85BQG8
Product Name 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
Memory Category SRAM Chip
Cycle Time 85 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

 - 27C512-150JI - Rochester Electronics
Rochester Electronics
Specs
Memory Category EPROM
Logic Family CMOS
Package Type PLCC; PLCC32
View Details
4 suppliers
SDRAM - 2420773 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
BGA Memory IC and Storage Component - 736-PCI7402ZHK - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Operating Temperature 0 C (32 F)
Package Type BGA; BGA
View Details
2 suppliers