The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
128K X 36, 256K X 18, 3.3V Synchronous ZBT SRAM
Win Source Part Number: 1006629-71V3559S80BG
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, SDR (ZBT)
Memory Type: Volatile
Memory Size: 4.5Mb (256K x 18)
Access Time: 8 ns
Voltage - Supply: 3.135V ~ 3.465V
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)
Temperature Range - Operating: 0°C ~ 70°C (TA)
Memory Format: SRAM
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 84 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Other Names: 2156-71V3559S80BG,ID
IC SRAM 4.5MBIT PARALLEL 119PBGA Product overview: 71V3559S80BG from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-71V3559S80BG can be used for catalog matching and distributor lookup.
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 119-PBGA (14x22)
IC SRAM 4.5MBIT PARALLEL 119PBGA
| Integrated Device Technology | Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V3559S80BG | 71V3559S80BG | 1006629-71V3559S80BG | 774-71V3559S80BG | 71V3559S80BG | 71V3559S80BG |
| Product Name | 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Cycle Time | 80 ns | |||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 256 kbits | 4500 kbits | 4500 kbits | |||
| Number of Words | 256 k |
