Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S75BQ8

Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O - 71V3559S75BQ8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
71V3559S75BQ8
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S75BQ8
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V3559S75BQ8
Product Name 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
Memory Category SRAM Chip
Cycle Time 75 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-93425DMQB30 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 30 ns
Cycle Time 20 ns
View Details
4 suppliers
Memory - 71V3556SA133BGGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.2 ns
Density 4500 kbits
View Details
Memory - 8 611 200 861 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details