Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558SA166BQG

Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet
Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O - 71V3558SA166BQG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
71V3558SA166BQG
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558SA166BQG
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V3558SA166BQG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V3558SA166BQG
Integrated Circuits (ICs) - Memory 71V3558SA166BQG
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site
Memory - 71V3558SA166BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 165-CABGA (13x15)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3558SA166BQG 71V3558SA166BQG 71V3558SA166BQG
Product Name 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 166 MHz 166 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256 kbits 4500 kbits 4500 kbits
Number of Words 256 k
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