Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558SA133BQGI

Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet
Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet

Suppliers

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3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O - 71V3558SA133BQGI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
71V3558SA133BQGI
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558SA133BQGI
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V3558SA133BQGI
Product Name 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
Memory Category SRAM Chip
Data Rate 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256 kbits
Number of Words 256 k
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