Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558S133PFGI

Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet
Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O - 71V3558S133PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
71V3558S133PFGI
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558S133PFGI
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Memory - 71V3558S133PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3558S133PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3558S133PFGI
Integrated Circuits (ICs) - Memory - Memory 71V3558S133PFGI
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3558S133PFGI 71V3558S133PFGI 71V3558S133PFGI
Product Name 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 4500 kbits 4500 kbits
Number of Words 256 k
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