Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558S133PFGI

Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet
Description
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O - 71V3558S133PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O
71V3558S133PFGI
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 71V3558S133PFGI
The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

The 71V3558 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3558 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3558S133PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3558S133PFGI
Integrated Circuits (ICs) - Memory - Memory 71V3558S133PFGI
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V3558S133PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3558S133PFGI 71V3558S133PFGI 71V3558S133PFGI
Product Name 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 4500 kbits 4500 kbits
Number of Words 256 k
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